The ZXMN10A11G is a new generation of trench MOSFETs from Zetex that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
The ZXMN10A11G is a 100V N-Channel Enhancement Mode MOSFET available in a SOT223 package. It features low on-resistance and fast switching speed, making it suitable for power management applications such as DC-DC converters and motor control. The device utilizes a unique TRENCH MOSFET structure to combine low resistance with high efficiency.
| Drain-Source Voltage | 100 V |
|---|---|
| Power Dissipation | 2 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT223 |
| Static Drain-Source On-State Resistance | 0.60 Ohm |
| Turn-On Delay Time | 27 ns |
The operating and storage temperature range is from -55 to +150 °C.
The maximum continuous drain current is 1.8 A when the gate-source voltage is 10 V and the temperature is 25°C.
The maximum power dissipation is 3.9 W at a temperature of 25°C.
The maximum drain-source voltage rating is 100 V.