This is the datasheet of ZXMN3A02X8, a N-channel enhancement mode MOSFET from Zetex. It has low on-resistance, fast switching speed, low threshold, low gate drive, low profile SOIC package, and is ideal for high efficiency, low voltage, power management applications.
The Zetex ZXMN3A02X8 is a low on-resistance TRENCH MOSFET designed for high efficiency, low voltage power management applications. Key features include fast switching speed, low threshold voltage, and availability in a low profile SOIC package suitable for DC-DC converters and motor control.
| Drain-Source Voltage | 30 V |
|---|---|
| On-State Resistance (Typical) | 0.025 Ohm |
| Pulsed Drain Current | 24 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | Low profile SOIC package |
It is suitable for DC-DC converters, power management functions, disconnect switches, and motor control.
The static drain-source on-state resistance (RDS(on)) is typically 0.025 Ohms at VGS=10V and ID=12A.
The gate-source threshold voltage (VGS(th)) is a minimum of 1 Volt when ID=250 µA and VDS=VGS.