This is the datasheet of ZXMN2A03E6, which is a low voltage, high efficiency N-channel enhancement mode MOSFET with low on-resistance and fast switching speed. It is suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.
This document is a provisional datasheet for the ZXMN2A03E6, a 120V N-Channel Enhancement Mode MOSFET from Zetex. The device utilizes a unique TRENCH MOSFET structure designed to combine low on-resistance with fast switching speed, making it suitable for high efficiency, low voltage power management applications such as DC-DC converters and motor control. It is available in a SOT23-6 package with various reel sizes for surface mounting.
| Drain-Source Voltage | 20 V |
|---|---|
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT23-6 |
| Static Drain-Source On-State Resistance | 0.055 Ω |
| Gate-Source Threshold Voltage | 0.7 V |
The device is ideal for DC-DC converters, power management functions, disconnect switches, and motor control.
The maximum junction temperature is +150 °C.
The typical static drain-source on-state resistance is 0.100 Ω.