This is a N-channel enhancement mode MOSFET from Zetex. It features low on-resistance, fast switching speed, low threshold, low gate drive, and is suitable for high efficiency, low voltage, power management applications.
This document is a datasheet for the Zetex ZXMN6A07Z, a 60V N-Channel Enhancement Mode MOSFET designed for high efficiency and low voltage power management applications. The device utilizes a TRENCH MOSFET structure to combine low on-resistance with fast switching speed.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 1.9 A |
| Pulsed Drain Current | 6 A |
| Package Type | SOT89 |
| Operating Temperature Range | -55 to +150 °C |
| Static Drain-Source On-State Resistance | 0.3 - 0.55 Ohm |
| Turn-On Delay Time | 1.8 ns |