ZXMN10A07Z is a 100V N-channel enhancement mode MOSFET with low on-resistance and fast switching speed, suitable for high efficiency, low voltage, power management applications.
This document is a technical datasheet for the ZXMN10A07Z, an N-channel enhancement mode MOSFET manufactured by Zetex. The device utilizes a unique Trench structure to combine low on-resistance with fast switching speed, making it suitable for power management applications such as DC-DC converters and motor control.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, static and dynamic parameters, and typical performance curves. It also includes package dimensions and ordering information for the SOT89 package.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 1.15 A |
| Package Type | SOT89 |
| Operating Temperature Range | -55 to +150 °C |
| Power Dissipation (Ta=25°C) | 1.5 W |
It is ideal for DC-DC converters, power management functions, relay and solenoid driving, and motor control.
The maximum repetitive pulsed drain current (IDM) is 3.9 A.