Zetex ZXMN10A08DN8 N-Channel Enhancement Mode MOSFET Datasheet

This is a document about the new generation of TRENCH MOSFETs from Zetex. The document describes the features of these MOSFETs, including low on-resistance, fast switching speed, low threshold, low gate drive, and low profile package. The product is suitable for high efficiency, low voltage power management applications.


Zetex ZXMN10A08DN8 N-Channel Enhancement Mode MOSFET Datasheet - cover page
Brand
Zetex
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
169 KB
Published
02 July, 2012
Updated
28 September, 2023
MD5 checksum
2987C4DA9DACA046ECB85FEBB03EBCF0

About this manual

The Zetex ZXMN10A08DN8 is a new generation TRENCH MOSFET designed for high efficiency and low voltage power management applications. It features a unique structure combining low on-resistance with fast switching speed, making it suitable for DC-DC converters, power management functions, disconnect switches, and motor control. The device is available in a low profile SOIC package.

What's inside

  • Description
  • Features
  • Applications
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions

Specifications

Drain-source voltage100 V
Pulsed drain current9 A
Operating and storage temperature range-55 to +150 °C
Static drain-source on-state resistance0.25 Ohms
Package typeSO8

Frequently asked questions

What are the main applications for the ZXMN10A08DN8?

The device is ideal for DC-DC converters, power management functions, disconnect switches, and motor control.

What is the maximum junction temperature?

The maximum junction temperature is +150 °C.

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