Zetex ZXMN10A08E6 N-Channel Enhancement Mode MOSFET Datasheet

This is a product description document about the new generation of TRENCH MOSFETs from Zetex. These products utilize a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. The features of this product include low on-resistance, fast switching speed, low threshold, and low gate drive. It is suitable for applications such as DC-DC converters, power management functions, disconnect switches, and motor control.


Zetex ZXMN10A08E6 N-Channel Enhancement Mode MOSFET Datasheet - cover page
Brand
Zetex
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
1 MB
Published
02 July, 2012
Updated
29 September, 2023
MD5 checksum
6DA74EA60B4A5DAED4B90EA71C7CD389

About this manual

The ZXMN10A08E6 is a 100V N-Channel Enhancement Mode MOSFET manufactured by Zetex. It features a unique Trench structure designed to combine low on-resistance with fast switching speed, making it suitable for high-efficiency, low-voltage power management applications such as DC-DC converters and motor control. The device is available in a SOT23-6 package.

What's inside

  • Summary
  • Ordering Information
  • Absolute Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions

Specifications

Drain-Source Voltage100 V
Pulsed Drain Current5.3 A
Operating Temperature Range-55 to +150 °C
Package TypeSOT23-6

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

What are the typical applications for this MOSFET?

It is ideal for DC-DC converters, power management functions, disconnect switches, and motor control.

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