ZXMN10A09K is a low on-resistance, fast switching speed N-channel enhancement mode MOSFET, ideal for high efficiency, low voltage power management applications.
This document is a datasheet for the ZXMN10A09K, a 100V N-Channel Enhancement Mode MOSFET designed in the DPAK (T0-252) package. The device utilizes a unique Trench MOSFET structure to combine low on-resistance with fast switching speed, making it suitable for high-efficiency power management applications such as DC-DC converters and motor control.
| Drain-source voltage | 100 V |
|---|---|
| Continuous drain current @ Ta=25°C | 7.7 A |
| Power dissipation at Ta=25°C | 43 W |
| Operating and storage temperature range | -55 to +150 °C |
| Package type | DPAK (T0-252) |
| Gate-source threshold voltage | 2.0 V to 4.0 V |
The maximum junction temperature is +150 °C.
The device is rated to operate between -55°C and +150°C.