Zetex ZXMHC6A07T8 Complementary MOSFET H-Bridge Datasheet

The ZXMHC6A07T8 is a 60V enhancement mode MOSFET from Zetex that combines low on-resistance with fast switching speed. It is ideal for high efficiency, low voltage, power management applications.


Zetex ZXMHC6A07T8 Complementary MOSFET H-Bridge Datasheet - cover page
Brand
Zetex
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
282 KB
Published
02 July, 2012
Updated
01 October, 2023
MD5 checksum
B22D2F57D27CD3F937B038CDFA28CEF8

About this manual

The document describes the ZXMHC6A07T8, a new generation of trench MOSFETs from Zetex designed for high efficiency and low voltage power management. The device combines N-channel and P-channel MOSFETs in an H-bridge configuration within a single SM8 package.

What's inside

  • Summary
  • Description
  • Features
  • Applications
  • Ordering Information
  • Absolute Maximum Ratings
  • Typical Characteristics
  • Electrical Characteristics
  • Package Outline

Specifications

Drain-Source Voltage (N-Channel)60 V
On-State Resistance (Typical)9.3 mΩ
Package TypeSM8
Operating Temperature Range-55 to +150 °C

Frequently asked questions

What is the primary application for this H-bridge?

The device is ideal for motor drive applications.

What is the maximum power dissipation for this device at room temperature?

The N-Channel version can dissipate up to 13 W and the P-Channel version up to 17 W when the ambient temperature is 25°C.

What are the operating and storage temperature limits for this MOSFET?

The device is rated to operate and be stored within a temperature range of -55 to +150 °C.

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