This document introduces a new generation of high density MOSFETs that utilize a unique structure combining the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
This document is a provisional datasheet for the Zetex ZXMD65P02N8, a dual 20V P-channel enhancement mode MOSFET. The device utilizes a unique structure to combine low on-resistance with fast switching speed, making it suitable for power management applications such as DC-DC converters and motor control. It is available in a low profile SOIC package.
| Drain-Source Voltage | -20 V |
|---|---|
| Static Drain-Source On-State Resistance | 0.050 Ohm |
| Turn-On Delay Time | 6.6 ns |
| Package Type | SOIC |
The maximum junction-to-ambient thermal resistance is 100 °C/W for a device mounted on a 25mm x 25mm FR4 PCB.