This document introduces the features and characteristics of IXYS IXGH/IXGM 17N100 and 17N100A low VCE(sat) IGBTs, including packages, maximum ratings, characteristic values, and application scenarios.
This document provides a comprehensive technical overview of the IXYS IXGH/IXGM 17 N100 and 17 N100A Insulated Gate Bipolar Transistors (IGBTs). It specifies maximum operating conditions including voltage ratings up to 1000 V and current capabilities ranging from 3 A to 68 A depending on temperature. The datasheet highlights features such as low on-state conduction losses, high current handling capability, and the use of a MOS gate turn-on mechanism for drive simplicity.
| Collector-Emitter Voltage (VCE) | 1000 V |
|---|---|
| Continuous Collector Current (IC) at 25°C | 3 A |
| Collector Current (IC) at 90°C | 17 A |
| Peak Pulse Collector Current (ICM) | 68 A |
| Package Type | TO-204 / TO-247 |
| Thermal Resistance Junction-to-Case (RthJC) | 0.83 K/W |
The device is suitable for AC motor speed control, DC servo and robot drives, DC choppers, UPS systems, and switch-mode power supplies.
The maximum junction temperature (TJ) is 150 °C.