HiPerFETTM Power MOSFETs are N-Channel Enhancement Mode with High dv/dt, Low trr, and HDMOSTM Family.
This document provides technical specifications for the IXFH/IXFM 67N10 and IXFH/IXFM 75N10 N-Channel Enhancement Mode Power MOSFETs from IXYS. These devices belong to the HDMOS™ Family and are designed for high dv/dt and low turn-on time applications.
| Drain-Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) | 67 A (67N10), 75 A (75N10) |
| Pulse Drain Current (I_DM) | 268 A (67N10), 300 A (75N10) |
| Operating Junction Temperature (T_J) | -55...+150 °C |
The maximum junction temperature is 150 °C.
Applications include DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies.
The threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V.