This is the datasheet for IXFH 22 N55, which is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET. Its maximum voltage is 550 V, continuous current is 22 A, and switching time is 250 ns.
The document is a preliminary datasheet for the IXYS IXFH22N55, a 550V N-channel enhancement mode Power MOSFET packaged in TO-247 AD. It features a low RDS(on) of 0.27 Ohms and is designed for applications requiring rugged polysilicon gate cell structures and unclamped inductive switching (UIS) ratings. The device is suitable for use in power factor control circuits, uninterruptible power supplies (UPS), battery chargers, and switched-mode power supplies. This manual is written in Chinese.
| Drain-Source Breakdown Voltage (VDS) | 550 V |
|---|---|
| Continuous Drain Current (ID) | 22 A |
| Peak Diode Current (IDM) | 88 A |
| Package Type | TO-247 AD |
| Operating Junction Temperature (TJ) | -55 to +150 °C |
| Maximum Power Dissipation (PD) | 300 W |
The device is suitable for Power Factor Control Circuits, Uninterruptible Power Supplies (UPS), Battery chargers, and Switched-mode power supplies.
The maximum operating junction temperature is 150 °C.
Yes, the device is Unclamped Inductive Switching (UIS) rated.