This document introduces the HiPerFETTM power MOSFET series from IXYS. These products are N-channel enhancement mode high dv/dt, low trr, HDMOSTM family. The features include international standard packages, low RDS(on), rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance - easy to drive and protect, fast intrinsic rectifier, etc. They are suitable for applications such as DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, etc.
This document provides technical specifications for the IXYS HiPerFETTM family of Power MOSFETs, specifically models 42N20, 50N20, and 58N20. These devices feature a high dv/dt capability, low turn-off time (trr), and are part of the HDMOSTM family designed for robust performance in power electronics.
| Drain-Source Breakdown Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (42N20) | 42 A |
| Continuous Drain Current (58N20) | 58 A |
| Maximum Junction Temperature (TJ) | +150 /G176C |
| Package Types | TO-247 AD (IXFH), TO-204 AE (IXFM) |
The device can operate with a junction temperature up to 150°C.
You must apply a mounting torque of 1.13 Nm or 10 lb.in.