This document describes the features and characteristics of IXYS' HiPerFETTM power MOSFETs, including international standard packages, low gate charge and capacitance, and low RDS(on).
This document provides preliminary technical specifications for the IXYS HiPerFET™ series, specifically models IXFH 40N30Q and IXFT 40N30Q. These are avalanche-rated, high dv/dt, low Qg N-channel enhancement mode power MOSFETs available in TO-247 and TO-268 packages.
| Drain-Source Voltage (Vdss) | 300 V |
|---|---|
| Continuous Drain Current (Ic) | 40 A |
| Pulse Drain Current (Ion) | 160 A |
| Total Gate Charge (Qg) | 95 nC to 140 nC |
| Thermal Resistance Junction-to-Ambient (Rthja) | 2.0 °C/W to 3.0 °C/W |
| Package Weight (TO-247) | 6 g |
The maximum junction temperature (T_j) rating is 150 °C.
The recommended mounting torque for the TO-247 case style is 1.13 Nm.