This data sheet lists the characteristic values of HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances.
This document is a preliminary datasheet for the IXYS HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode series. It covers the specific models IXFH 52N30Q, IXFK 52N30Q, and IXFT 52N30Q, which are avalanche rated, high dv/dt, and feature low gate charge and capacitances. The devices utilize an HDMOSTM process and a rugged polysilicon gate cell structure.
| Drain-Source Breakdown Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) | 52 A |
| Peak Diode Current (IDM) | 208 A |
| Thermal Resistance Junction-to-Case (RthJC) | 0.35 K/W |
| Gate-Source Threshold Voltage (VGS(th)) | 2 to 4 V |
| On-Resistance (RDS(on)) | 60 mΩ |
| Reverse Recovery Time (trr) | 250 ns |
The device can operate with a junction temperature ranging from -55 to +150 degrees Celsius.
The chip capability allows for a continuous current of 52 amperes.
The specified mounting torque for the TO-247 package is 1.13 Nm or 10 lb.in.