IXFH/IXFT is a N-channel enhancement mode MOSFET device released by IXYS, with a rated voltage of 500V and a rated current of 40A. It features low gate charge and capacitance, easy to drive, fast switching. The device adopts international standard package, low RDS(on), rated for unclamped inductive load switching (UIS) and mold epoxies meet UL 94 V-0 flammability classification.
This document provides advanced technical information for the IXYS HiPerFET™ Q-Class power MOSFETs, specifically models IXFH 40N50Q and IXFT 40N50Q. These N-Channel Enhancement Mode devices are designed with an avalanche rating, low gate charge, and high dv/dt capabilities.
| Continuous Drain Current (ID) | 40 A |
|---|---|
| Peak Pulse Drain Current (IDM) | 160 A |
| Drain-Source Breakdown Voltage (VDS) | 500 V |
| Package Type | TO-247 / TO-268 |