IXYS IXFB38N100Q2 Power MOSFET Datasheet

This datasheet provides information on the IXYSEPLUS264TM(IXFB) product, including maximum ratings, characteristic values, features, applications, and advantages.


IXYS IXFB38N100Q2 Power MOSFET Datasheet - cover page
Brand
IXYS
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
143 KB
Published
15 June, 2012
Updated
30 September, 2023
MD5 checksum
9F5349211BEA42C561DEB73EE467736A

About this manual

This document is a technical datasheet for the IXYS IXFB38N100Q2, an N-Channel Enhancement Mode Power MOSFET. Key features include avalanche rated capability, low gate charge (Qg), high dV/dt performance, and a PLUS 264 package designed for clip or spring mounting.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Source-Drain Diode Characteristics
  • Package Outline
  • Output Characteristics
  • Thermal Resistance

Specifications

Continuous Drain Current (I_D)38 A
Pulse Drain Current (I_DM)152 A
Power Dissipation (P_D)890 W
Input Capacitance (C_iss)7200 pF

Frequently asked questions

What are the applications for this MOSFET?

It is suitable for DC-DC converters, switched-mode and resonant-mode power supplies over 500kHz, DC choppers, pulse generation, and laser drivers.

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