This is the IXFC 15N80Q datasheet. IXFC 15N80Q is a Q-class N-channel enhancement mode avalanche rated, high dv/dt, low Qg HiPerFETTM ISOPLUS 220TM MOSFET. It has the following features: Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<35pF) - Low RDS (on) - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier. Applications include DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and AC motor control. Advantages include easy assembly: no screws or isolation foils required - Space savings - High power density
This document is a datasheet for the IXYS IXFC 15N80Q, an N-channel enhancement mode MOSFET designed for high power density and rugged performance. Key features include a silicon chip on a Direct-Copper-Bond substrate, isolated mounting surface with 2500V electrical isolation, and Unclamped Inductive Switching (UIS) rating. The device is optimized for applications such as DC-DC converters, battery chargers, and switched-mode power supplies.
| Drain-Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) | 13 A |
| Peak Diode Current (IDM) | 60 A |
| Power Dissipation (PD) | 230 W |
| Operating Junction Temperature (TJ) | -40 ... +150 °C |
| On-Resistance (RDS(on)) | 0.65 Ω |
| Input Capacitance (Ciss) | 4300 pF |
| Reverse Recovery Time (trr) | 250 ns |
The device is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, and DC choppers.
No, the device features easy assembly with no screws or isolation foils required.
The device provides 2500V electrical isolation between the mounting surface and the tab.