This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.
This document is a preliminary data sheet for the IXYS IXFE 44N60, a single die N-channel enhancement mode Power MOSFET. The device features a rugged polysilicon gate cell structure and is rated for unclamped inductive switching (UIS). It is designed for applications such as DC-DC converters, battery chargers, and switched-mode power supplies.
| Drain-Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 41 A |
| Pulse Drain Current (IDM) | 176 A |
| Total Package Inductance | 130 nH |
| Operating Junction Temperature | -55 ... +150 °C |
| Package Type | ISOPLUS 227™ (IXFE) |
| Weight | 19 g |
The device is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and temperature and lighting controls.
Yes, the device is unclamped inductive switching (UIS) rated.