This document describes the features and characteristics of the IXFC52N30P model PolarHTTM HiPerFET power MOSFET product from IXYS. It features high power dissipation, isolated mounting surface, 2500V electrical isolation, and low drain to tab capacitance.
This document provides technical information for the IXYS IXFC52N30P, a HiPerFET Power MOSFET featuring N-Channel Enhancement Mode operation. The device utilizes a Silicon chip on Direct-Copper-Bond substrate to achieve high power dissipation and an isolated mounting surface with 2500V electrical isolation.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current | 32 A |
| Pulse Drain Current | 150 A |
| Power Dissipation | 100 W |
| Operating Junction Temperature | -55 ... +150 °C |
| Drain-Source On-Resistance | 75 mQ |
| Input Capacitance | 550 pF |