The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, low drain to tab capacitance, and low on-resistance.
This document is a technical datasheet for the IXYS IXFC24N50 and IXFC26N50 N-channel enhancement mode MOSFETs. The devices feature an electrically isolated back surface (ISOPLUS220TM) suitable for high power dissipation applications.
| VDS (Drain-Source Voltage) | 500 V |
|---|---|
| ID (Continuous Drain Current) @ 25°C | 26N50: 23 A; 24N50: 21 A |
| RDS(on) (On-Resistance) | 26N50: 0.20 Ω; 24N50: 0.23 Ω |
| VGS(th) (Gate-Source Threshold Voltage) | 2 V to 4 V |
| Ciss (Input Capacitance) | 4200 pF |
They are suitable for DC-DC converters, battery chargers, switched-mode power supplies, and AC motor control.
It provides an isolated mounting surface which allows for easy assembly without screws or isolation foils.