The FDH3595 is a high conductance low leakage diode produced by Fairchild Semiconductor Corporation. Its maximum working temperature is 175℃, the maximum reverse working voltage is 125V, the maximum average rectified current is 200mA, and the maximum peak forward current is 600mA.
This document is a datasheet for the Fairchild Semiconductor FDH3595, a High Conductance Low Leakage Diode packaged in the DO-35 case. The device is sourced from Process 1M and shares characteristics with the MMBD1501-1505 series.
The datasheet provides absolute maximum ratings, including a working inverse voltage of 125 V and an average rectified current of 200 mA. It also lists thermal characteristics such as a total device dissipation of 500 mW and a thermal resistance of 300 °C/W. Electrical characteristics are specified for various forward voltage conditions and include reverse voltage leakage current and diode capacitance.
| Working Inverse Voltage | 125 V |
|---|---|
| Average Rectified Current | 200 mA |
| DC Forward Current | 500 mA |
| Recurrent Peak Forward Current | 600 mA |
| Total Device Dissipation | 500 mW |
| Thermal Resistance, Junction to Ambient | 300 °C/W |
The maximum working inverse voltage is 125 V.
The maximum average rectified current is 200 mA.
The maximum operating junction temperature is 175 °C.