Philips PHP3N20L PowerMOS Transistor Datasheet

PHP3N20L is a N-channel enhancement mode logic level power field-effect transistor produced by Philips Semiconductors. The maximum drain-source voltage is 200 V, the rated drain current is 3.5 A, and the rated total power dissipation is 50 W. The typical switching time is 6 ns, and the package form is TO220AB.


Philips PHP3N20L PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
49 KB
Published
12 June, 2012
Updated
30 September, 2023
MD5 checksum
C6C72A507EF2C576DA8D6FA09DA92DC4

About this manual

This document is a product specification datasheet for the Philips PHP3N20L, an N-channel enhancement mode logic level field-effect power transistor. It is designed for use in switched mode power supplies, motor control circuits, and general purpose switching applications. The device features high avalanche energy capability and stable blocking voltage.

What's inside

  • General Description
  • Quick Reference Data
  • Pinning
  • Limiting Values
  • Electrical Characteristics
  • Thermal Resistances
  • Source-Drain Diode Ratings
  • Mechanical Data

Specifications

Drain-source voltage200 V
Drain current (DC)3.5 A
Total power dissipation50 W
Drain-source on-state resistance1.5 Ohm
Package typeTO220AB

Frequently asked questions

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 3.5 A at a temperature of 25°C.

What is the operating junction temperature range?

The operating junction temperature range is from -55°C to +175°C.

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