BSP121 is a N-channel enhancement mode vertical D-MOS transistor produced by Philips Semiconductors. It is packaged in SOT223 and has a rated voltage of 200V, current of 350mA and power consumption of 1.5W.
The document is a product specification data sheet for the BSP121, an N-channel enhancement mode vertical D-MOS transistor. It features a miniature SOT223 envelope and is designed for applications such as line current interrupters in telephone sets, relays, high-speed circuits, and line-transformer drivers.
The datasheet details electrical characteristics including maximum ratings like a drain-source voltage of 200 V and total power dissipation up to 1.5 W. It includes pin configurations, thermal resistance data, switching times, capacitance values, and package outline dimensions.
| Drain source voltage (max) | 200 V |
|---|---|
| Gate-source voltage (open drain) (max) | +20 V |
| Drain current (DC) (max) | 350 mA |
| Drain-source on-resistance (typical) | 450 mΩ |
| Transfer admittance (typical) | 350 mS |
The mounting pad requires a minimum area of 6 cm² on an epoxy printed-circuit board.