This document describes the characteristics and performance parameters of the ASI UML15 NPN silicon RF power transistor.
The ASI UML15 is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the Omnigold™ Metalization System and is packaged in a 4L stud style with dimensions of .280 inches.
| Package Style | 4L STUD |
|---|---|
| Collector-Emitter Voltage | 65 V |
| Collector-Base Voltage | 65 V |
| Collector Power Dissipation | 31.8 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
The ASI UML15 is an NPN silicon RF power transistor designed for use with a .280 4L stud package style.
The device has a maximum Vces of 65 V and a maximum IcBo of 800 mA.
The typical power dissipation (Poiss) is 31.8 W when the ambient temperature is 25°C.