The ASI MLN1033F is a NPN silicon RF power transistor designed for applications requiring high power and good thermal performance. It features a maximum power dissipation of 20.6W and a gain of 12dB.
The document is a technical datasheet for the ASI MLN1033F, which is described as an NPN Silicon RF Power Transistor. It features the Omnigold™ Metalization System and is available in a 250 2L FLG package style.
The text includes maximum ratings such as collector current (Ic) of 0.5A, collector-emitter voltage (Vceo) of 40 V, and power dissipation (Po) of 2.0 W at 25°C. It also lists electrical characteristics including breakdown voltages for the collector-base, emitter-base, and collector-emitter junctions.
| Package Style | 250 2L FLG |
|---|---|
| Collector-Emitter Voltage (Vceo) | 40 V |
| Emitter-Base Voltage (Vebo) | 25V |
| Collector-Base Voltage (Vebo) | 3.5V |
| Power Dissipation (Po) at 25°C | 2.0 W |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
The order code listed in the document is ASI10626.
It is an NPN Silicon RF Power Transistor.