The document describes the features and characteristics of the ASI MLN1033S model.
The document is a datasheet for the ASI MLN1033S, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It provides key specifications including a collector current of 10A and a package style of .2804L stud.
The text lists maximum ratings such as a voltage of 60V and power dissipation of 140W at 25°C, along with operating temperatures ranging from -65°C to +200°C. Detailed electrical characteristics are provided for conditions at 25°C.
| Collector-Emitter Voltage (Vces) | 60 V |
|---|---|
| Power Dissipation (Poiss) | 140 W @ Tc = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (RθJC) | 17 °C/W |
| Package Style | .2804L STUD |
The ASI MLN1033S is an NPN silicon RF power transistor.
The device operates from -65 °C to +200 °C.