ASI MLN1037F NPN Silicon RF Power Transistor Datasheet

The ASI MLN1037F is a NPN silicon RF power transistor from Advanced Semiconductor, Inc. It features the Omnigold™ metallization system, and is rated for 10 A current, 60 V and 35 V voltage, and a maximum power dissipation of 140 W.


ASI MLN1037F NPN Silicon RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
13 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
1E77D83252AF5AC9D38E2EDB610FD826

About this manual

The ASI MLN1037F is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It features a TO-252FL package style and operates within a junction temperature range of -65 °C to +200 °C.

Key specifications include a maximum collector current (Ic) of 10A, a collector-emitter voltage (Vce) rating of 35V, and a power dissipation of 140W at 25°C. The device supports operating temperatures from -65 °C to +150 °C.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Characteristics
  • Package Style
  • Order Code

Specifications

Collector-Emitter Voltage (Vce)35 V
Power Dissipation (Poiss)140 W @ Tc = 25 °C
Operating Temperature Range (Tj)-65 °C to +200 °C
Storage Temperature Range (Tstg)-65 °C to +150 °C
Thermal Resistance (Rthjc)5.5 °C/W
Package Style.250 2L FLG

Frequently asked questions

What is the maximum power dissipation at an ambient temperature of 25 °C?

It can dissipate up to 140 W when the case temperature is 25 °C.

What are the operating and storage temperature ranges?

The device operates from -65 °C to +200 °C and stores from -65 °C to +150 °C.

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