This document is a specification sheet for ASI10639. It mainly introduces the product's characteristics, features, parameters, etc.
The document describes the ASI OSC-2.0SM, an NPN silicon RF power transistor designed for high-frequency applications. It utilizes the proprietary Omnigold™ Metalization System to ensure reliability and performance in power amplifier scenarios.
Key electrical characteristics include a maximum collector current of 700 mA, a collector-emitter voltage rating of 30 V, and a power dissipation of 17.6 W at an ambient temperature of 50°C or lower. The device operates within a junction temperature range of -65°C to +200°C.
| Collector Current (IC) | 700 mA |
|---|---|
| Collector-Emitter Voltage (VCC) | 30 V |
| Power Dissipation (PDISS) | 17.6 W @ TC ≤ 50 OC |
| Operating Temperature Range (TJ) | -65 OC to +200 OC |
| Package Style | .250 2L FLG |
The order code for the OSC-2.0SM is ASI10639.
Yes, it features the Omnigold™ Metalization System.