This is a specification sheet for the ASI TVU0.5A NPN silicon RF power transistor. The transistor features characteristics such as BVCBO, BVCEO, BVEBO, ICBO, hFE, PG IMD1, and utilizes the Omnigold™ Metalization System. It is suitable for applications such as RF power amplifiers.
This document is a datasheet for the ASI TVU0.5, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. The device features a .280 4L stud package style.
The datasheet provides maximum ratings including collector current of 2.0 A and a maximum operating junction temperature of +200 °C. It also lists key electrical characteristics such as breakdown voltages (BVceo, BVcso) and power dissipation at various temperatures.
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Maximum Operating Junction Temperature (Tj) | +200 °C |
| Power Dissipation @ Tc = 25°C | 31.8W |
| Collector-Emitter Breakdown Voltage (BVceo) | 45 V |
The ASI TVU0.5 is designed for use as an NPN silicon RF power transistor.
The maximum continuous power rating is 31.8 W at a case temperature of 25°C.