This document describes the characteristics and parameters of the MLN2030SS NPN Silicon RF Power Transistor from Advanced Semiconductor Inc.
The ASI MLN2030SS is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is available in a 0633 ATE package style with a .205 4L stud configuration.
The device operates within a junction temperature range of -65 °C to +200 °C and a storage temperature range of -65 °C to +150 °C. Key electrical characteristics include a maximum collector-emitter voltage (BVceo) of 60 V and a maximum collector-base voltage (BVcbo) of 4.0 V.
| Package Style | 0633 ATE |
|---|---|
| Stud Configuration | .205 4L STUD |
| Maximum Power Dissipation | 140 W @ To= 25 °C |
| Operating Junction Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Maximum Power Dissipation | 1.0 W |
The order code for the ASI MLN2030SS is ASI10633.
The ASI MLN2030SS is designed with the Omnigold™ Metalization System.