The document describes an NPN silicon RF power transistor with low noise, high current, and high frequency characteristics. The transistor is suitable for RF power amplifier applications.
The ASI OSC-1.3SH is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is manufactured by Advanced Semiconductor, Inc. and is identified by the order code ASI10638.
The document lists maximum ratings including a collector current of 700 mA and a power dissipation of 17.6 W at a case temperature of 550°C. It also provides electrical characteristics such as breakdown voltages and capacitance values at 25°C.
| Collector Current (Ic) | 700 mA |
|---|---|
| Emitter Voltage (Vee) | 30 V |
| Power Dissipation (Poiss) | 17.6 W @ Te 550°C |
| Operating Temperature (Ty) | -65 °C to +200 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 45 V |
| Collector-Base Breakdown Voltage (BVcbo) | 45 V |
| Emitter-Base Breakdown Voltage (BVebo) | 3.5 V |
The maximum collector current rating is 700 mA.
The typical power gain is 4.5 dB when the supply voltage is 21 V and the collector current is 200 mA.