This is a product manual introducing the characteristics and features of ASI OSC-0.3C. This product is a NPN silicon RF power transistor with Omnigold™ metalization system, maximum current of 225mA, maximum voltage of 25V, and maximum power of 5.0W.
The ASI OSC-0.3C is an NPN silicon RF power transistor designed for high-frequency applications. It features the Omnigold™ Metalization System and is packaged in a .138 2L Flg package style.
The document lists maximum ratings including a collector current of 225 mA and a power dissipation of 5.0 W at 25 °C. Key electrical characteristics include a collector-emitter breakdown voltage of 25 V and a maximum power gain of 320 mW at 7.5 GHz.
| Collector Current (Ic) | 225 mA |
|---|---|
| Collector-Emitter Voltage (Vce) | 25 V |
| Power Dissipation (Poiss) | 5.0 W @ Tc = 25 °C |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +200 °C |
| Thermal Resistance (RthJC) | 30 °C/W |
| Collector-Emitter Breakdown Voltage (BVceo) | 16 V |
| Collector-Base Breakdown Voltage (BVcbo) | 25 V |
| Collector-Emitter Saturation Voltage (Vces) | 2.0 V |
| Collector-Emitter Voltage (Vceo) | 500 V |
| Current Gain (hFE) | 20 to 200 |
| Input Capacitance (Cies) | 1.5 pF |
| Output Capacitance (Coes) | 4.0 dB |
| Power Gain (Pout) | 320 mW |
The device has a maximum power rating of 5.0 W when the case temperature is 25 °C.
The unit operates from -65 °C to +200 °C.
The maximum voltage between collector and emitter is 25 V.