This document describes the features and characteristics of a NPN silicon RF power transistor called AVD075P. It has features such as a maximum operating current of 6.5A, maximum peak voltage of 55V, and maximum power dissipation of 250W.
The ASI AVD075P is an NPN silicon RF power transistor designed for specific applications. It utilizes the Omnigold™ Metalization System and is packaged in a .280 4L Pill (A) style package.
The device features a peak collector current of 6.5 A and a peak power dissipation of 250 W. Key electrical characteristics include a typical power gain of 75 dB at frequencies between 1025 and 1150 MHz, with a noise figure of 35%.
| Package Style | .280 4L PILL (A) |
|---|---|
| Peak Collector Current | 6.5 A |
| Peak Power Dissipation | 250 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance | 0.7 °C/W |
| Collector-Base Breakdown Voltage | 65 V |
| Collector-Emitter Breakdown Voltage | 65 V |
| Emitter-Base Breakdown Voltage | 3.5 V |
| Collector Cutoff Current | 6.25 mA |
| DC Current Gain | 15 to 120 |
| Power Gain | 75 dB |
It is an NPN silicon RF power transistor designed for use with the Omnigold Metalization System.
The maximum peak current rating is 6.5 A.
The maximum peak power dissipation is 250 W.