This is a NPN silicon RF power transistor with a maximum current of 6.5 A, a maximum voltage of 55 V and a maximum power of 250 W. The product features the Omnigold™ metallization system.
This document is a technical datasheet for the ASI AVD075F, an NPN Silicon RF Power Transistor. The device utilizes the Omnigoid™ Metalization System and comes in a .250 2L FLG (B) package style.
The datasheet provides maximum ratings including a peak collector current of 6.5 A, a maximum voltage of 55 V, and a power dissipation of 75 W at specific frequencies. It also lists key electrical characteristics such as breakdown voltages and gain values under standard test conditions.
| Package Style | .250 2L FLG (B) |
|---|---|
| Operating Temperature Range | -65 °C to +150 °C |
| Collector-Emitter Breakdown Voltage | 65 V |
It is an NPN silicon RF power transistor designed for use with the Omnigoid Metalization System.
The device has a maximum collector-emitter voltage of 65 V and a peak current rating of 6.5 A.
The transistor operates from -65 °C to +150 °C.