The document describes the features and characteristics of the ASI AVD035P, which is an NPN Silicon RF Power Transistor.
The Advance Semiconductor AVD035P is an NPN silicon RF power transistor designed for high-frequency power amplification applications. It utilizes the proprietary Omnigold™ Metalization System to ensure reliability and performance in demanding environments.
Key specifications include a maximum collector current of 2.5A, a peak voltage rating of 55V between collector and base, and a peak power dissipation of 100W. The device operates within a temperature range of -65°C to +200°C and is housed in a .280 4L Pill (A) package.
| Collector Current (IC) | 2.5 A |
|---|---|
| Peak Collector-Base Voltage (VCB) | 55 V |
| Peak Power Dissipation (PD) | 100 W |
| Operating Temperature Range (TJ) | -65°C to +200°C |
| Storage Temperature Range (TSTG) | -65°C to +150°C |
| Output Power (POUT) | 35 W |
| Frequency Range | 1025 - 1150 MHz |
The device uses a .280 4L Pill (A) package.
The order code is ASI10559.