DE375-501N21A RF Power MOSFET is a RF power MOSFET produced by IXYS. Its maximum ratings are VDSS = 500 V, ID25 = 25 A, RDS(on) = 0.22 Ω, and PDC = 940 W. Its features are high isolation voltage (>2500V), excellent thermal transfer, increased temperature and power cycling capability, low gate charge and capacitance, easier to drive, faster switching, low RDS(on), very low insertion inductance (<2nH), and no beryllium oxide (BeO) or other hazardous materials.
This document provides a comprehensive technical overview of the IXYS DE375-501N21A, an N-Channel Enhancement Mode RF Power MOSFET. Key features include a 500 V drain-source voltage rating, 25 A continuous current capability, and optimized performance for frequencies up to 50 MHz. The device utilizes an isolated substrate design with high isolation voltage and excellent thermal transfer properties.
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 25 A |
| Maximum Frequency | 50 MHz |
| Power Dissipation (P_D) | 940 W |
| Operating Temperature Range | -55 to +175 °C |
| Gate-Source Voltage (V_GS) | ±20 V |
The SPICE model may be downloaded as a text file from the Directed Energy website.
The MOSFET is rated for a maximum frequency of 50 MHz.