IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.
This document is a preliminary data sheet for the IXYS HiPerFETTM Power MOSFET model IXFE 80N50. It describes an N-channel enhancement mode device featuring low on-resistance (RDS(on)) of 55 mΩ, avalanche rating, and high dv/dt capability.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Peak Pulse Drain Current (IDM) | 320 A |
| On-Resistance (RDS(on)) | 55 mΩ |
| Operating Junction Temperature Range | -40 ... +150 °C |
| Package Outline | SOT-227B |
The device is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and temperature and lighting controls.
Yes, the datasheet lists it as an Avalanche Rated device with high dv/dt capability.
The specified mounting torque for the terminal connection is 1.5 Nm or 13 lb.in.