The document describes the features and characteristics of the ASI3001 model NPN silicon RF power transistor, suitable for general purpose Class C power amplifier applications up to 3500 MHz.
The ASI3001 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 3500 MHz. Key features include a hermetic microstrip package and an Omnigold™ metalization system.
| Frequency Range | up to 3500 MHz |
|---|---|
| Collector Current (IC) | 200 mA |
| Collector-Emitter Voltage (VCC) | 30 V |
| Power Dissipation (PD) | 6.0 W |
| Operating Temperature (TJ) | -65 OC to +200 OC |
| Gain (PG) | 7 dB min. |
The ASI3001 is designed for general purpose Class C power amplifier applications up to 3500 MHz.
The device provides a minimum gain of 7 dB when operating at 1.0 W output power and 3,000 MHz frequency.
The maximum rated collector current (IC) for this transistor is 200 mA.