The document describes the features and characteristics of the ASI AJT085 NPN silicon RF power transistor, including voltage, current, power output, and other parameters.
The ASI AJT085 is an NPN silicon RF power transistor designed with an Omnigold™ Metalization System. It comes in a .400 2NL Flg package style.
Key specifications include a collector-emitter voltage (Vceo) of 40V and a maximum power dissipation of 300W at Tc < 100°C. The device operates within a junction temperature range of -65 °C to +200 °C.
| Package Style | .400 2NL Flg |
|---|---|
| Collector-Emitter Voltage (Vceo) | 55 V |
| Collector-Base Voltage (Vcbo) | 102.5 V |
| Emitter-Base Voltage (Vebo) | 3.5 V |
| Collector Current (Ices) | 20 mA |
| Frequency (fT) | 200 MHz |
| Power Dissipation (Po) | 85W |