ASI4000 is a NPN silicon RF power transistor designed by Advanced Semiconductor Inc. (ASI) for general purpose Class C power amplifier applications up to 4200MHz.
The ASI AS14000 is an NPN silicon RF power transistor designed for general SOA purpose Class C power amplifier applications operating up to 4200 MHz. It features a hermetic microstrip package and utilizes the Omnigold™ Metalization System.
Key electrical characteristics include a minimum gain of 5 dB at 0.5 W/4,000 MHz, with maximum ratings for collector-emitter voltage (Vce) up to 30 V and operating temperature range from -65 °C to +200 °C.
| Frequency Range | up to 4200 MHz |
|---|---|
| Gain (Pe) | 5 dB min. at 0.5 W/ 4,000 MHz |
| Collector-Emitter Voltage (Vce) | 30 V |
| Operating Temperature Range | -65 °C to +200 °C |
| Package Style | .2502L FLG |
It is designed for general purpose Class C power amplifier applications up to 4200 MHz.
The minimum power gain is 5 dB at 0.5 W and 4,000 MHz.
The operating temperature range is from -65 °C to +200 °C.