AJT006 is a NPN silicon RF power transistor produced by Advanced Semiconductor Inc., with a maximum current of 0.9A, a maximum operating voltage of 32V, and a maximum power of 25W.
The ASI AJT006 is an NPN silicon RF power transistor designed for high-frequency applications. It features an input matching network and an Omnigold™ metalization system to ensure stability and performance. The device is rated for a maximum collector current of 0.9A and a power dissipation of 25W.
| Collector-Emitter Voltage (VCC) | 32V |
|---|---|
| Power Dissipation (PDISS) | 25 W |
| Operating Temperature (TJ) | -65 OC to +250 OC |
| Frequency Range | 960 - 1215 MHz |
| Output Power (POUT) | 6.0 W |
The maximum power dissipation is 25 W when the case temperature is 75 OC or lower.
The operating frequency range is 960 to 1215 MHz.