This data sheet provides ASI4001 characteristics parameters such as BVCBO, BVCER, RBE, BVEBO, ICBO, hFE, COB, PG, ηηC etc.
The ASI4001 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications operating up to 4200 MHz. Key features include a minimum power gain (PG) of 5 dB at 1.0 W and 4,000 MHz, a hermetic microstrip package, and an Omnigold™ metalization system.
| Operating Frequency | up to 4200 MHz |
|---|---|
| Collector Current (IC) | 0.25 A |
| Collector-Emitter Voltage (VCC) | 30 V |
| Power Dissipation (PDISS) | 7.0 W @ TC = 25 OC |
| Operating Temperature Range | -65 OC to +200 OC |
| Minimum Power Gain (PG) | 5 dB at 1.0 W / 4,000 MHz |
The ASI4001 is designed for general purpose Class C power amplifier applications up to 4200 MHz.
The minimum power gain is 5 dB at 1.0 W and 4,000 MHz.
The maximum collector current rating is 0.25 A.