ASI AJT030 NPN Silicon RF Power Transistor Datasheet

AJT030 is a NPN silicon RF power transistor from ASI company. It has input matching network and Omnigold metallization system. It has a maximum current of 3.5A, a maximum voltage of 40V, and a maximum power dissipation of 75W. It works in a temperature range of -65 to 250℃.


ASI AJT030 NPN Silicon RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
13 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
493663A62FE9B6199E19590F0E3ABB0C

About this manual

The ASI AJT030 is an NPN silicon RF power transistor designed for use with an input matching network. It utilizes the Omnigold™ Metalization System and is housed in a .400 2L FLG package style.

Key electrical characteristics include a maximum collector current (Ic) of 3.5A and a maximum collector-emitter voltage (Vceo) of 40V. The device operates within a junction temperature range of -65°C to +250°C and a storage temperature range of -65°C to +200°C.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Characteristics

Specifications

Package Style.400 2L FLG
Operating Frequency960-1215MHz

Frequently asked questions

What is the ASI AJT030 designed for?

The ASI AJT030 is an NPN silicon RF power transistor.

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