ASI4003 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 4200MHz.
The ASI ASI4003 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications operating up to 4200 MHz. It features a hermetic microstrip package with Omnigold™ metalization and offers a minimum gain of 5 dB at 3 W/4,000 MHz.
Key electrical characteristics include a collector-emitter breakdown voltage (BVceo) of 45 V and a maximum power dissipation of 14.22 W at Tc = 25 °C. The device is rated for an operating temperature range from -65 °C to +200 °C.
| Frequency Range | up to 4200 MHz |
|---|---|
| Gain (Pg) | 5 dB min. |
| Package Style | .250 2L FLG |
| Collector-Emitter Breakdown Voltage (BVceo) | 45 V |
| Maximum Power Dissipation (Pd) | 14.22 W @ Tc = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
The transistor provides a minimum gain of 5 dB at 3 W and 4,000 MHz.
The maximum power dissipation is 14.0 W when the temperature is 25 °C.