This document describes the characteristics and features of the ASI AJT150 NPN Silicon RF Power Transistor, including parameters such as BVCEO, BVCER, BVEBO, ICES, and hFE.
The ASI AJT150 is an NPN silicon RF power transistor designed for applications requiring high power handling. It features the OmniGold™ Metalization System and is packaged in a .400 2L Flg (A) style package.
The document provides maximum ratings including a collector current of 10A and a power dissipation of 140W. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 100 and a power gain of 7.5 dB at specific frequencies.
| Package Style | .400 2L FLG (A) |
|---|---|
| Collector-Emitter Voltage | 60 V |
| Power Dissipation | 140 W |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Thermal Resistance | 0.57 °C/W |
| DC Current Gain (hFE) | 10 to 100 |
The ASI AJT150 is an NPN silicon RF power transistor designed for use with an input matching network.
The maximum power dissipation is 140 W.