The characteristics of NPN silicon RF power transistor AUR300, including minimum, typical, maximum values, as well as package size
The ASI AUR300 is an NPN silicon RF power transistor designed for use with a .400 BAL FLG (A) package style. It features an Omnigold™ Metalization System and is intended for applications requiring input matching networks.
The document provides maximum ratings for parameters such as collector current (Ic), collector-emitter voltage (Vces), and power dissipation (Pois). It also lists typical electrical characteristics including breakdown voltages (BVcso, BVces, BVceo) and current gain (Ne) at 25°C.
| Package Style | .400 BAL FLG (A) |
|---|---|
| Collector Current (Ic) | 21.6A |
The AUR300 is designed for use as an NPN silicon RF power transistor.
The maximum collector current is 21.6A.
The maximum power dissipation is 875 W at 25 degrees Celsius.