ASI ASI3003 NPN Silicon RF Power Transistor Datasheet

The ASI 3003 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 3500 MHz.


ASI ASI3003 NPN Silicon RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
13 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
4DC354EA38EF79D3E2507C2316AB1041

About this manual

The ASI ASI3003 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 3500 MHz. It features a hermetic microstrip package with an Omnigold metalization system and is rated for a maximum power dissipation of 6.0 W at 25 °C.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Characteristics
  • Package Style

Specifications

Frequency Rangeup to 3500 MHz
Package Style.2502L FLG
Maximum Collector Current20 mA
Maximum Collector-Emitter Voltage30 V
Maximum Power Dissipation6.0 W
Operating Temperature Range65 °C to +200 °C
Storage Temperature Range-65 °C to +200 °C
Thermal Resistance15 °C/W

Frequently asked questions

What is the primary application of the ASI3003?

It is designed for general purpose Class C Power Amplifier applications.

What is the maximum operating frequency?

The device is rated for applications up to 3500 MHz.

What is the minimum power gain at 3 W and 3,000 MHz?

The minimum power gain is 5 dB.

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