The document describes the features and characteristics of the ASI AJT015 model, including input matching network and Omnigold™ metallization system.
This document is a technical datasheet for the ASI AJT015, an NPN silicon RF power transistor. It provides key features such as the OmniGoid™ Metalization System and input matching network design.
The datasheet lists maximum operating ratings including collector current of 1.8A and voltage of 32V. It also specifies electrical characteristics like breakdown voltages (BVceo, BVcbo) and gain-bandwidth product at various frequencies.
| Collector-Emitter Voltage (Voc) | 32V |
|---|---|
| Power Dissipation (Poiss) | 50 W @ Tc < 100 °C |
| Operating Temperature Range (Tt) | -65 °C to +250 °C |
| Storage Temperature Range (Tste) | -65 °C to +200 °C |
| Thermal Resistance Junction-to-Case (θjc) | 3.0 °C/W |
The datasheet specifies a frequency range of 960-1215 MHz for the power output measurement.
The device can operate from -65 °C to +250 °C.
The maximum power rating is 50 W when the case temperature is less than 100 °C.